摘要
文中依据固体经验电子理论［１］，建立了ＮｉＴｉ形状记忆合金马氏体晶胞的键络模型；并就合金化元素Ｖ对其相变点ＭＳ的影响进行了电子结构分析，为揭示该功能材料中成分－性能－结构之间的内在联系做了初步探索，从电子结构的层次上初步解释了Ｖ对ＮｉＴｉ合金ＭＳ点的作用机制。
Based on the empirical electron theory of solids and molecules, the bonding complex models of the martensitic cell are set up, and an analysis of VES for alloying element (V) on the M S of NiTi shape memory alloys is made. Some preliminary attempts at revealing the relationship between alloy composition structure property and NiTi alloy martensitic VES are presented.
出处
《复合材料学报》
EI
CAS
CSCD
北大核心
1996年第4期34-38,共5页
Acta Materiae Compositae Sinica
