摘要
根据应用系统的需求正确估算电子学系统的总噪声限度是设计的第一步。被测信号的带宽、增益要求、放大器的开环增益以及稳定性都直接影响着电路各主要参数的选择。探测器的输出电容是FET输入型放大器和双极型放大器的主要选择依据。这些方面的理论分析结果是光电二极管应用的低噪声电路设计的基础。
Design an ultra-low noise electronics for APD detector is a topic full of challenge. The first step to design is to evaluate the noise level limit that the electronics has to be fulfilled from the system point of view. The signal bandwidth required, signal gain required and the stability all influence the parameters of the impedance amplifier, specially the capacitor of APD determines the choice of FET input low noise amplifier or bipolar low noise amplifier. All aspects about the design of ultra-low noise impedance amplifiers are theoretically analyzed and concluded in this paper. The result of this paper is the basic guidelines for the practical applications.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2006年第3期280-283,共4页
Nuclear Electronics & Detection Technology
