期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

ULSI化学机械抛光(CMP)材料去除机制模型 被引量：2

Material Removal Mechanism and Model on Chemical Mechanical Polishing in ULSI
在线阅读 下载PDF
导出
摘要 CMP已成为IC制造中的关键工艺之一,相关机制模型的研究是当前CMP的热点。综述了考虑抛光液的流动、抛光垫的弹性和硬度、研磨颗粒的大小和硬度等不同因素的机制模型,并对基于不同假设的模型作了分析和比较。最后对CMP模型未来的发展和研究方向提出了展望。 Chemical mechanical polishing（CMP） is one of the most important processes in IC fabrication. The mechanism model is the hotspot in CMP research in current status. A survey of some models was given which describe specific aspects of CMP, such as the flow of the slurry or the bending and hardness of the polishing pad or abrasive size and hardness. The different assumptions of the models were investigated and the models were compared. CMP models and its key problems about CMP in the future were prospected.
作者 钟旻 张楷亮 宋志棠 封松林
机构地区 中国科学院上海微系统与信息技术研究所纳米技术研究室半导体功能薄膜工程技术研究中心
出处 《润滑与密封》 CAS CSCD 北大核心 2006年第5期170-173,共4页 Lubrication Engineering
基金 中国博士后基金(2005037522) 中国科学院王宽诚博士后工作奖励基金资助项目(20040916094306) 上海市博士后基金(05R214156) 上海-应用材料科技合作共同计划(AM基金0414) 上海市纳米专项(05nm05043) 中国科学院资助项目(Y2005027) 上海市科委项目(0452nm012 04DZ05612 04ZR14154 04JC14080 05JC14076 AM0517)资助
关键词 化学机械抛光 平坦化 材料去除机制 模型 集成电路 chemical mechanical polishing planarization material removal mechanism model integrate circuit
分类号 TH117.1 [机械工程—机械设计及理论]
  • 相关文献

参考文献13

  • 1John Schuler.CMP technology and markets[C].Semicon China 99 Technical Symposium,March 17-17,1999,Beijing,China.
  • 2J Tichy,J A Levert,L Shan,et al.Contact mechanics and lubrication hydrodynamics of chemical mechanical polishing[J].J of the Electrochemical Society,1999,146(4):1523-1528.
  • 3Ping Hsun Chen,Bing Wei Huang,Han-C Shih.A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing[J].Thin Solid Films,2005,476(1):130-136.
  • 4Jongwon Seok,Cyriaque P Sukam,Andrew T Kim,et al.Material removal model for chemical-mechanical polishing considering wafer flexibility and edge effects[J].Wear,2004,257(5/6):496-508.
  • 5J J Vlassak.A model for chemical-mechanical polishing of a material surface based on contact mechanics[J].Journal of the Mechanics and Physics of Solids,2004,52(4):847-873.
  • 6Tat-Kwan Yu,Yu C C,Orlowski M.A statistical polishing pad model for chemical mechanical polishing[C].International Electron Devices Meeting 1993 Technical Digest,1993:865-868.
  • 7Cook L M.Chemical process in glass polishing[J].J of Non-Crystalline Solids,1990,120:152-171.
  • 8S R Runnels.Feature-scale fluid based erosion modeling for chemical-mechanical polishing[J].J of the Electrochemical Society,1994,141(7):1900-1904.
  • 9S R Runnels,L M Eyman.Tribology analysis of chemical-mechanical polishing[J].J of the Electrochemical Society,1994,141(6):1698-1701.
  • 10S R Runnels,P Rentcln.Modeling the effect of polish pad deformation on wafer surface stress distributions during chemical-mechanical polishing[M].Dielectric Sci Technol,1993:110-121.

同被引文献40

  • 1欧阳习科,蒋业华,周荣.磨料磨损理论发展[J].华电技术,2004,28(6):25-28. 被引量：9
  • 2王永光,赵永武.基于分子量级的化学机械抛光材料去除机理[J].Journal of Semiconductors,2007,28(2):308-312. 被引量：9
  • 3Lai Jiun Yu. Mechanics, mechanism, and modeling of the chemical mechanical polishing process[ D]. National Taiwan University ,2001.
  • 4Preston F. The theory and design of plate glass polishing machines[ J]. J Soc Glass Technol, 1927,11:214 - 256.
  • 5Steigerwald J M, Murarka S P, Gutmann R J. Chemical mechanical planarization of microelectronic materials [ M ]. New York : John Wiley and Sons, 1997.
  • 6Shi F G, Zhao B, Wang S Q. A new theory for CMP with soft pads[ C ]//Proc of International Technology Conference, San Francisco, CA, USA, 1998:73 - 75.
  • 7Tseng W T, Wang Y L. Re-examination of pressure and speed dependence of removal rate during chemical mechanical polishing processes [ J ]. J Electrochem Soc, 1997,144 ( 2 ) : L15 - L17.
  • 8Zhao B, Shi F G. Chemical mechanical polishing: threshold pressure and mechanism [ J ]. Electrochem Soild-State Lett, 1999,2(3) :145 - 147.
  • 9Runnels S R. Feature-scale fluid-based erosion modeling for chemical mechanical polishing[ J]. Journal of Electrochemical Society, 1994,141 (7) : 1900 - 1904.
  • 10Runnels S R, Eyman L M. Tribology analysis of chemical mechanical polishing [ J ]. Journal of Electrochemical Society, 1994.141 (6) :1698 - 1701.

引证文献2

二级引证文献6

润滑与密封
2006年 第5期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部