摘要
提出一种测量小剂量离子注入样品均匀性的新方法——多探针Ｃ－Ｖ法．研制了相关的硬件和软件．此方法基于以下２个新颖的思想：１）采用多根探针测量，由微机通过开关矩阵进行控制，自动轮流切换，大大提高了速度、效率和可靠性．２）采用深浅不同的彩色地图（ＭＡＰ）来表示大硅片上各测量点的注入剂量，从而形象直观地显示出离子注入的均匀性，既容易理解，又容易记忆．
This paper provides a new method of multiprobe C V technique to automatically determine the uniformity of low dose ion implants, and developes the relative hardware and software. This method is based on two ideas listed below: 1)Using many probes to measure the uniformity. A PC computer is used to controll a switch matrix for automatically selecting these probes in turn. This improves the speed, efficiency and reliability of measurement.2)Using a map of different colors to demonstrate the uniformity of ion implants. It is direct, easily comprehensible and rememberable.Experimental results obtained for a double implanted MOS sample indicate that this technique can be used to monitor the process of low dose ion implantation.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1996年第1期13-18,共6页
Journal of Xi'an Jiaotong University
基金
国家"八五"重点科技攻关项目
关键词
半导体
离子注入
掺杂
均匀性
多探针C-V法
measurement semiconductor ion implants doping profile uniformity multiprobe computer
