摘要
介绍了用微波工作室软件对C波段低噪声放大器的设计及调试。设计制作的C波段低噪声场效应管放大器,采用全微带匹配网络,利用NEC公司生产的场效应管N32584C,两级级联,用微波工作室软件进行设计、仿真和优化,实现在4.4～5.1GHz范围内增益30dB左右,噪声系数小于0.8dB。用Protel99SE画印制板,该放大器制作在聚四氟乙烯基板上。
The design and debugging of C band low noise amplifier with microwave studio software are introduced. The fabricated C band low noise FET amplifier is cascaded with all micro-strip mat ching network and NEC FET N32584C, and designed, simulated and optimized with microwave studio software. It achieves a gain around 30dB at 4.4-5.1GHz with noise figure less than 0.8dB. The amplifier is fabricated on polytetrafluoroethylene substrate with PCB being drawn with Prote199SE.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第5期374-376,381,共4页
Semiconductor Technology
关键词
噪声系数
稳定性
优化
noise figure： stability： optimization
