摘要
针对先进纳米铜互连技术的要求,研究了脉冲电流密度对铜互连线电阻率、晶粒尺寸和表面粗糙度等性能的影响。实验结果表明,2～4A/dm2电流密度下的铜镀层拥有较小电阻率、较小的表面粗糙度和较大的晶粒尺寸。
Aiming at the technology demand of advanced copper interconnection, the effect of pulse current density on Cu layer properties such as resistance, crystal size and surface roughness were investigated. The results showed that when current density was 2-4 A/dm^2, the electrodeposited layer had lower resistance, lower surface roughness and larger crystal size.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第5期329-333,共5页
Semiconductor Technology
基金
国家自然科学基金项目(60176013)
上海市科委AM基金(0304)
关键词
铜互连
脉冲电镀
电阻率
X射线衍射
copper interconnection： pulse plating： resistance
XRD
