摘要
为求解硅片表面微小粒子在任意线偏振平面入射光照射下的散射光光强分布,选择了基于Mie散射的杨氏模型为依据,推导了该模型下散射光强空间分布的计算方法,并给出了0.54μm球形粒子在垂直、倾斜入射下光强空间分布的模拟计算结果,以及入射平面第一象限内散射光强与国外已发表实验结果的比较·
The Unobstructed Reflection Model （Young Theory） for calculating light scattering from a spherical particle on a smooth surface is reviewed and presented with special attention to the polarization of the incident beam and position of the detector. As a test of the approximation, some calculations for 0. 54 μm diameter polystyrene latex spheres （PSL） on a silicon wafer is carried out. The results of these tests are presented and compared with experimental results that published abroad previously.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2006年第4期517-520,共4页
Acta Photonica Sinica
基金
上海市第三期光科技项目(编号:036105026)资助
关键词
硅片
散射
米氏理论
杨氏模型
微分散射截面
Silicon wafer
Scattering
Mie theory
Young＇s model
Differential scattering cross section
