摘要
对绝缘栅双极晶体管（ＩＧＢＴ）中宽基区、低增益ｐｎｐ晶体管与普通高增益晶体管之间的差异进行了综合分析，结果表明，ＩＧＢＴ的工作特性必须采用双极传输理论来描述。利用两种不同的瞬态分析方法，准静态近似（ＱＳ）和非准静态近似（ＮＱＳ），导出了ＩＧＢＴ瞬态时的电压状态方程及电荷状态方程。
An analysis is made on the difference between the wide base,low gain PNP transistors in the IGBT and the conventional high gain PNP transistors.It is shown that the operating characteristics of the IGBT should be described with the ambipolar transport theory.Two approaches,quasi static approximation(QS)and non quasi static approximation(NQS),are employed to derive the transistor voltage state equation and the charge state equation,respectively.The limitations of the QS approach in the description of transient characteristics of the IGBT are pointed out.
出处
《微电子学》
CAS
CSCD
1996年第5期287-291,共5页
Microelectronics
关键词
绝缘栅
双极晶体管
IGBT
双极传输理论
Power electronics,Insulated gate bipolar transistor,Ambipolar transport theory,Quasi state approximation,Non quasi state approximation
