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La^(3+)离子掺杂钨酸铅单晶的微结构缺陷 被引量:1

STUDIES OF MICROSTRUCTURES AND DEFECTS IN La^(3+) IONS-DOPED LEAD TUNGSTATE SINGLE CRYSTALS
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摘要 钨酸铅晶体是一种非化学计量化合物,缺陷丰富,蕴含着利用掺杂产生新效应和开发新功能的广泛可能性。探讨了不同浓度La3+掺杂对于钨酸铅晶体发光性能的影响,如热释光、X射线激发发光、光致发光等。La3+掺杂有效地抑制了陷阱中心,使发光受到强烈的抑制,在高浓度掺杂的钨酸铅中,激发机制有所改变,通过XPS测试的结果分析了不同浓度La3+掺杂机制。低浓度掺杂中,La3+取代Pb2+,形成缺陷复合体[2(La3Pb+).-(VPb)″];高浓度掺杂晶体中,La3+离子不但占据Pb2+位置,而且也会占据W6+位置(La3W+),产生La3+的自补偿机制,形成La3+的自补偿对[(La3W+)-(La3Pb+).]-(VO)..或缺陷聚集体[3(LaP3b+).-(La3W+)]。 Lead tungstate, PbWO4, is a nonstoichiometric single crystal with many defects. Doping is the most important method to improve the scintillating properties. In this paper, X-ray excited luminescence, thermoluminescence and photohiminescence have been investigated for La^3+ -doped PbWO4. La^3+ doping significantly depressed luminescence of PWO. Doping in low concentrations, La^3+ substitutes Pb^2+ sites with excess charge compensated by intrinsic Vpb for the formation of defect complexes [2(Lapb^3+)-V"pb]. Upon higher La^3+ doping, La^3+ would occupy W-sites with'the exception of Pb-sites and cause charge compensation not only by [2(Lapb^3+)-V"pb], but also by La^3+ self-compensation pairs [(Law)'''-(Lapb)' ]-(Vo)" or cluster [3 (Lapb)'-(Law)'''], where new nonradiative recombination occurs and the luminescence of PWO is intensively suppressed. This doping mechanism is discussed in terms of X-ray photoelectron spectroscopical experiments.
出处 《矿物学报》 CAS CSCD 北大核心 2006年第1期84-88,共5页 Acta Mineralogica Sinica
关键词 晶体生长 钨酸铅 缺陷 掺杂 发光光谱 PbWO4 defect doping mechanism luminescence spectra
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