摘要
ＰＴＣＲ效应是由多晶半导瓷晶界势垒引起的，而晶界势垒取决于受主表面态能级和钡缺位的不均匀分布所形成的势垒。本文系统研究了受主含量在不同烧结工艺条件下与ＰＴＣＲ性能的关系，这对于如何改变晶界势垒的高度与宽度来获得满足性能要求的ＰＴＣＲ产品得到了一些有价值的结论。
Abstract Positive temperature coefficient resisitivity effect is formed by grain boundary in polycrystaline semiconducfive ceramics, while grain boundary barrier depends on the energy levels of the acceptor surface state and the defect distribation formed by barium vacancy in the samples. The relationship between PTCR character and acceptor content during different sintering conditions has been investigated in this paper. Thus, we can obtain needed PTCR products through changing the height and width of grain boundary barrier.
出处
《电子器件》
CAS
1996年第3期165-170,共6页
Chinese Journal of Electron Devices
