摘要
用分布参数的电路理论对等离子刻蚀、反应离子刻蚀机上从射频电源到真空室的功率传输电路进行了分析。用双口网络的分析方法推导出L型低通向上匹配网络的参数计算公式。根据射频放电光电信号与反射功率的关系,提出了采用非线性自寻优的控制策略实现自动匹配的新方法。研制成硬件以8031单片微机为主、软件算法为改进的座标轮换成败法的自寻优匹配器。
In this paper the circuit for power transmission from the radio-frequency generator to the vacuum chamber of a plasma or reactive ion etching device has been analysed based upon the theory of distributed parameters circuitry. A formula for calculating the parameters of the Ltyped match network has been derived by means of twin-port network analysis. A new approach to automatic matching using nonlinear selfoptimization control strategy has been proposed in accordance with the relationship between the photo-electric signal caused by the radio-frequency discharge and the reflected lpower. With the 8301 single chip microprocessor as its principal hardware and an improved success-failure coordinate turn-taking method as the algorithm of its software a selfoptimizing match unit has been developed.
关键词
集成电路
等离子
反应离子
刻蚀
impedance matching
dry etching, twin-port net work, selfoptimizing control.
