摘要
建立了发光二极管提取效率的理论计算模型,分析了影响隧道再生双有源区AlGaInP发光二极管提取效率的主要因素,包括从出光表面出射的光、体内的光吸收损耗、衬底对光的吸收损耗、金属电极对光的吸收损耗,模拟计算了隧道再生双有源区AlGaInP发光二极管的提取效率,计算得到隧道再生双有源区AlGaInP LED管芯的上有源区和下有源区提取效率分别为5．24％和9．16％。
A method for calculating the extraction efficiency of light-emitting diodes is offered. The determinants of the extraction efficiency of tunneling-regenerated double-active-region （TRDAR） AlGaInP light-emitting diodes are investigated, including light escaping through the top surface, light loss due to absorption of diode bulk, light loss due to absorption of substrate and anode. The extraction efficiency of tunneling-regenerated double-active-region A1GalnP light-emitting diodes is calculated. The extraction efficiency of 5.24% and 9.16% for the top active region and the bottom active region are obtained respectively in TRDAR LED chips.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第1期80-84,共5页
Research & Progress of SSE
基金
本文得到973计划(批准号:G20000683-02)
国家基金(60077004)
市教委项目(KP0204200201)的资助
关键词
铝镓铟磷
发光二极管
隧道结
提取效率
AlGaInP
light-emitting diodes
tunneling junction
extraction efficiency
