摘要
讨论在(Zr0.8Sn0.2)TiO4主晶相系统中,不同的添加剂对介电性能的影响,固定添加1%ZnO,用单因素法,探讨这种添加剂CuO、CuO-V2O5、G1玻璃和G2玻璃的量与(Zr0.8Sn0.2)TiO4材料介电性能的关系。找出一种既能有效改善主晶相又低成本的添加剂,用X射线衍射仪对其进行物相分析。研究结果表明,当G2玻璃的添加量等于2%时,得到了介质损耗tgδ最小、烧成温度为1320℃的材料,有望用作微波陶瓷。
（Na1-xKx）0.5Bi0.5TiO3 （NKBT） ceramics were prepared by conventional solid-state reation. XRD results show that all ceramic samples are perovskite and the morphotropic phase boundary （MPB） is located in x=0.18-0.22. The electron probe microstructure analysis （EPMA）images show that the grains have regular shape and the crystalline boundaries are obviously observed. The dielectric loss tan δ is less than 5%, the best piezoelectric constant d33=153 pC/N at x=0.22 and planar electromechanical coupling factor kp=0.299 at x=0.20 were observed.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2006年第3期19-22,22,共4页
China Ceramics
基金
江西省教育厅资助项目(赣财教[2005]67号)
关键词
(Zr0.8Sn0.2)TiO4陶瓷
复合添加剂
烧成温度
介质损耗
sodium bismuth titanate, potassium bismuth titanate, lead-free piezoelectric ceramics, morphotropic phase boundary（MPB）
