摘要
目的:探讨波长为532 nm半导体激光对体外培养骨肉瘤多药耐药细胞株(R-OS-732)增殖的影响。方法:实验分4个实验组和1个空白对照组。实验组在特定功率半导体激光功率下根据照射时间分为A、B、C和D组(输出功率为200 mW,照射时间分别为5、10、20和40 min),分别于照射后24 h及48 h进行观察。空白对照(E)组除不加激光照射外其他条件与实验组完全相同。采用MTT比色法观察R-OS-732细胞增殖情况,并通过光镜观察细胞形态学变化。结果:在532 nm波长、输出功率200 mW半导体激光照射条件下,A、B、C及D组与E组相比,细胞存活率明显降低,并有随照射剂量增加而加剧的趋势(P<0.05);光镜观察见细胞贴壁生长减少,细胞密度变小。结论:在一定波长、能量密度及照射时间的条件下,低能量半导体激光照射可导致体外培养骨肉瘤多药耐药细胞增殖受抑。
Objective To explore the effects of semiconductor laser on proliferation of the multidrug-resistant model of human osteosarcoma cell line （R-OS-732）. Methods Four test groups and one control group were set up. The test groups were divided into A, B, C and D groups according to the irradiation time （output power was 200 mW）. The time of laser irradiation of A, B, C and D groups were 5, 10, 20 and 40 min, repectively. The control group （E） wasn＇t treated with laser irradiation. MTT method was used to observe the proliferation of R-OS-732, and the morphological changes of the cells were observed by inverted microscope. Results The survival rates of cells in all test groups under condition of semiconductor laser irradiation with 200 mW output power and 532 nm weavlength, compared with control group （P〈0.05）; and it increased with the irradiation dose of semiconductor laser. The cellular density decreased under light microscope. Conclusion The semiconductor laser can result in the inhibition of proliferation of R-OS-732 cultured in vitro.
出处
《吉林大学学报（医学版）》
CAS
CSCD
北大核心
2006年第2期268-270,共3页
Journal of Jilin University：Medicine Edition
基金
吉林省科技厅资助课题(200505189)
关键词
半导体
激光
骨肉瘤
抗药性
多药
增殖
抑制
semiconductors
lasers
osteosarcoma
drug resistance, multiple
inhibition
proliferation
