摘要
本文介绍了半导体SiC材料的结构和特性、材料制备及器件研制的进展,并与Si、GaAs、金刚石等材料作了比较,强调指出SiC做为一种接近实用的高温、高频、高功率和抗辐射器件材料的优越性,同时亦指出SiC器件进一步实用化所需解决的问题及应用前景。
In this paper material structure and characterization in monocrystalline silicon carbide, as well results of recent development in technology of SiC crystal and film growth and SiC devices are presented. A comparison of physical and electrical properties of SiC with those of Si, GaAs and diamond is discussed. Singlecrystal SiC as a material for Semiconductor devices with high-temperature, -frequency, -power handing and irradiation resisting capacities is emphasized. Some problems encountered for divices research are also discussed. The application of SiC in the future is given.
关键词
高温半导体
碳化硅
半导体材料
Silicon Carbide, High temperature semiconductor
