摘要
介绍采用TSMC公司的0.18μm CMOS工艺应用于5 GHzWLAN(无线局域网)发射集中的功率放大器的设计方法,并给出了仿真结果。电路采用A类三级放大结构,在3.3 V工作电压下,增益为23.7 dB,1 dB压缩点输出功率21.8 dBm,最大功率附加效率15%,可望用于WLAN 802.11a标准的系统中。
This paper presents a design of a 5GHz CMOS power amplifier based on a 0. 18μm CMOS technology for IEEE 802.11 a wireless LAN system. Simulation results and layout are provided. It is implemented in three cascaded stages. With a supply voltage of 3.3 V, its gain is 23.7 dB, Pout.1dB =21. 8 dBm, the maximum Power Added Efficiency（PAE） is 15%. It works steadily and can be expected to be used in IEEE 802.11 a wireless LAN systems.
出处
《电子工程师》
2006年第3期1-3,24,共4页
Electronic Engineer
