摘要
用HF掺杂薄氧化物层的MOSFET和MOS电容具有优良的电学特性。在本文所研究的有效场范围内,这种器件的有效表面迁移率为一般器件的1.7-2.4倍,这表明用HF增强氧化能得到速度更快的MOS器件。
The MOSFET's and MOS capacitors with HF-doped thin oxides have been shown to haveexcellent electrical characteristics. The effective surface mobilities of such HF-devices are 1.7-2.4 times higher than those of conventional devices over the channel effective field range studied. It indicates that MOS device with higher speeds could be achieved by HF-enhanced oxidation.
