摘要
研究了E类RF放大器的电路结构、工作原理,并提出了一个工作频率为1.8GHz,输出功率为26dBm,漏极效率达到66.5%的低谐波失真BiCMOS功率放大器,为了达到设计目标,文章采用了一些特殊的方法,包括采用两级放大结构,差分和交叉耦合反馈结构。最后用0.35μm SiGeBiCMOS工艺实现了E类射频功率放大器的设计。
After discussing some aspects of the Class E power amplifier, such as circuit＇s structure, working principle, this paper presents the design of a high efficiency and low THD power amplifier, which works at 1.8GHz, and delivers 26dBm output power to an antenna. In order to meet this design goal, some special methods are used, including the use of 2 stage structure, differential and cross-coupled feedback structure. At last, the proposed power amplifier is implemented with 0. 35μm CMOS technology.
出处
《国外电子测量技术》
2006年第3期23-26,共4页
Foreign Electronic Measurement Technology
