摘要
本文报道了利用能量过滤成像技术对注氮SOI结构的研究。能量选择狭缝分别置于△E=16eV和△E=25eV,对应于Si和Si_3N_4的等离子能量损失的非弹性散射,电子显微照片可以给出更多的结构信息。顶层单晶硅和上氮化硅层之间的过渡层可以明显地划分成两个亚层:氮化硅亚层和硅亚层。从衬底的〈111〉衍射束成的暗场像看出硅亚层的晶粒取向与顶层单晶硅的取向是不同的,这说明硅亚层中的硅晶粒的形成与长大与顶层单晶硅的形成无关。
The study of N^+ implanted silicon on insulator by energy filtered imaging is reported for
the first time. The inelastic images give much structure information When the energy window set
at△E=16eV and at △E=25eV, corresponding to the plasmon energy loss of si and Si_3N_4, respectively.
The interface between the top silicon layer and the upper silicon nitride layer can be
subdivided into two sublayers: the silicon nitride sublayer and the silicon sublayer.The dark
field image with substrate si <111> spot shows that the grains in the silicon sublayer are different
in orientation as the top silieon layer. This indicates that the nucleation and growth of the grains
in the silicon sublayer is independent on formation of the top silicon layer.
关键词
注氮
SOI
电子能量
过滤成像
N^+ implanted SOI strueture
Transmission Electron Microscopy(TEM)
Electron Energy Loss Spectroscopy (EELS)
Electron energy filtered imaging
