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Au(111)衬底上单层Pd的电子态密度

Studies on the Electronic State Density of a Monolayer Pd on Au(111)
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摘要 用Recursion方法计算了几个表面系统的电子态密度,这些系统在费米能附近的态密度主要是由原子的d轨道贡献的.Pd(111)的态密度峰基本上就在费米能附近,而Au(111)-Pd的态密度峰在费米能级以下约0.9eV附近,这种差别被归因于原子间距的增大和顶层与衬底间原子d轨道能的较大差异. The saute densities of several surface systems have been studied with recursion method. It is found that the state densities near Fermi level are mainly derived from the atomic d orbitals. For Pd(111),the state density peak derived from Pd d levels is near EF but for An (111)-Pd, the same Peak is about 0. 9eV below EF. The difference between the peak positions for the two systems has been thought as a result of the different Pd spacing and the great difference between the d level of the overlayer and that of the substrate.
作者 荀坤 王怀玉
机构地区 烟台大学物理系
出处 《烟台大学学报(自然科学与工程版)》 CAS 1996年第1期34-38,共5页 Journal of Yantai University(Natural Science and Engineering Edition)
关键词 电子结构 表面 Recursion法 态密度 electronic structure recursion surface Pd An
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