摘要
本工作采用时间分辨的OES技术,研究了TEA CO_2激光诱发SiH_4等离子体过程。探测到了Si,Si^+,Si^(2+),SiH^+,SiH,Si_2和H,并测量了它们的时间演变过程;实验还研究了OES随样品气压和激光能量的变化;探讨了SiH_4的分解及其碎片之间的反应过程,提出SiH_4的主要分解通道为产生Si的通道。本工作对SiH_4 LPCVD动力学研究有重要意义,对低温等离子体研究也有一定参考价值。
The process of SiH_4 Laser plasma using the technique of temporal Optical Emission Spectroscopy(OES) is studied. Some emitting lines of the Si,Si^+,Si^(2+),SiH,SiH^+ Si_2 and H areobserved, and their temporal evolution are measured.The variation of OES as a function ofgas pressure and laser energy are also measured.The dissociation process of SiH_4 and reactionprocess among dissociated fragments of SiH_4 are discussed.We suggest that the main dissociationprocess is SiH_4→Si+2H_2(4H).The results are relatively important to the study of SiH_4LPCVD and the study of Low-temperature plasma.
基金
国家自然科学基金
