摘要
在77K和室温下,研究了Hg_(1-x)Cd_xTe(x=0.5)p—n结伏安特性随流体静压力的变化,从中得到了禁带宽度E_g的压力系数。结果表明,在低压范围(0<P<1.0GPa),E_g随压力线性增加,而在室温高压范围(P>1.4GPa),E_g～P关系明显偏离线性。实验还观察到,在正、反向小偏压区域,I—V特性随压力的变化呈现“反常”行为。
The hydrostatic pressure dependence of the current-voltage characteristics of Hg_(1-x)Cd_xTep-n junctions with x=0.5 has been studied at room temperature and 77K.The pressure coefficientof the energy gap Eg was obtained.It is found that Eg increases linearly with pressure inthe low pressure range 0<P<1.0GPa.However,in the high pressure range (P>1.4Pa) atroom temperature, Eg versus pressure deviates from this linearity remarkably. It is als observedthat, in the small forward and reverse bias region,the pressure dependence of the I-V characteristicsexhibits an 'anomalous' bchavior.
关键词
HGCDTE
P-N结
流体静压力
伏安特性
Hydrostatic pressure, Hg_(1-x)Cd_xTe
Current-voltage characteristics of p-n junction
Energy gap
