摘要
依据双晶摇摆曲线的形成原理,提出了一种高分辨率,高灵敏度的测定离子注入单晶损伤与应变的双晶(n^v,—n^v)排列方法。考虑到掠入射情形的色散效应,对掠射角的选择进行了讨论。对Ga注入Si单晶样品的测定证实了(n^v—n^v)排列的优越性,摇摆曲线上得到了未曾见过的细微振荡。
A double crystal diffraction method with two crystals arranged in(n^v,-n^v)is suggestedaccording to the formation mechanism of rocking curves.The method has a high resolutionand a high sensitivity in the determination of damage and strain in crystals implanted by ions.The limit for choosing glancing angle of X-rays on crystal is discussed considering dispersioneffects.The superiorities of the method are proved in the investigation of the silicon crystalimplanted by gallium ions.A fine oscillation which has not been reported is observed onthe rocking curve.
关键词
离子注入
单晶损伤
硅
双晶排列法
Silicon
Ion-implanted
Double-crystal X-ray diffraction
Rockingcurve
X-ray diffraction
