摘要
本文介绍了与HgCdTe红外探测器阻抗相匹配的DFZ481型红外前置放大电路组件。组件单元电路具有高增益(≥50dB)、宽带、低源阻、低噪声等特性。组件采用双列直插式陶瓷管壳封装,很容易制成16、32……160元组件。
This paper introduces type DFZ481 8-unit preamplifier module matched with the resistance of HgCdTe infrared detector. The unit circuit of module has high gain (≥50dB), wide band, low source resistance, low noise etc. This module used DIP ceramic package, therefore it is very easy to form 16, 32, …and 160 unit modules.
出处
《半导体情报》
1990年第2期18-20,11,共4页
Semiconductor Information
