摘要
本文简要介绍了CX502N型微波砷化镓场效应晶体管的设计、特性与制造。器件采用了新的“积木式”台面结构,减小了栅-漏反馈电容。测试表明,器件具有高增益、高栅-漏击穿及低噪声特性。此外,文中还给出了与CX502N GaAs MESFET类似的器件CX503 GaAs MESFET的一些结果。
The design, performance and fabrication of type CX502N microwave GaAs MESFET are briefly presented. The device used new 'building blocks' mesa structure, which reduced gate-drain feedback capacitance. The measurement has shown that the devices have higher associated gain, higher gate-drain breakdown voltage and lower noise figure. In addition, some research results of type CX503 microwave GaAs MESFET which is similar to type CX502N GaAs MESFET, are also given in this paper.
出处
《半导体情报》
1990年第2期63-66,77,共5页
Semiconductor Information
