摘要
本文报导的X波段硅微波振荡晶体管WZ321型器件,采用了亚微米全干法刻蚀技术、离子注入基区掺杂技术、砷发射区、多层金属化电极、小寄生参量的全密封封装,使器件具有良好的微波性能和可靠性。器件典型的微波参数是在7.5GHz下,振荡输出20mW。
Type WZ321 X-band Si microwave transistor for oscillator is reported. The device utilized fully dry etching for submicron technology, base doping using ion implantation technique, Asdoped emitter, multilayer metallization and fully sealed package with smaller parasitic parameters, Therefore, it has excellent microwave performance and higher reliability, The typical microwave parameter of the device is oscillatory output 20m W at 7.5GHz.
出处
《半导体情报》
1990年第2期73-77,共5页
Semiconductor Information
