摘要
本文评述了分子束外延在以 ZnSe 为代表的宽带半导体材料及其超晶格结构研究中的最新进展。介绍了在晶格匹配和不匹配的衬底上分子束外延生长 ZnSe等Ⅱ-Ⅵ族宽带半导体和有关的材料分析。叙述了在 ZnTe,Zn(S、Se)以及磁性半导体 MnSe 和低磁性半导体 Zn_(1-x)Mn_xSe 上生长 ZnSe 所形成的超晶格和多量子阱结构,并在此基础上说明了一些相关的物理现象。
The recent advances in molecular beam epitaxy(MBE)for wide- bandgap semiconductor materials with ZnSe as a representative and their superlattices are reviewed in this paper.The MBE-grown ZnSe and other Ⅱ-Ⅵ wide-bandgap semiconductors on both lattice-matched and mismatched substrates and related material characterization are also presented.The superlattice and multiple quantum well struc- tures formed by the growth of ZnSe on 1he ZnTe,Zn(S,Se)and magnetic semi- conductor MnSe and dilute magnetic semiconductor Zn_Mn_Se are narrated.Some related physical phenomena are accordingly interpreted.
出处
《半导体光电》
CAS
CSCD
北大核心
1990年第2期148-156,共9页
Semiconductor Optoelectronics
关键词
半导体材料
分子束外延
宽带
Molecular Beam Epitaxy
Wide-Bandgap Semiconductor Material
Superlattice and Multiple Quantum Well
