摘要
采用电子束蒸发法制备了过渡族金属(Fe、Co、Cu)掺杂ZnO薄膜。分析和研究了衬底温度以及Cu掺杂量对薄膜相结构的影响,获得沿c轴高度择尤取向的高质量ZnO薄膜。采用原子力显微镜(AFM)观察薄膜的显微结构,利用所得的图象信息对薄膜进行分析,发现400℃的衬底温度对硅衬底薄膜是合适的,与XRD分析相吻合。通过对薄膜磁性能的分析和研究,得出一些有意义的结果:适量Fe、Co离子掺杂的ZnO薄膜,在室温下具有铁磁性,而在此基础上掺入少量的Cu离子能改善薄膜的磁性能。
Transition-metal（Fe,Co,Cu）-doped ZnO films were fabricated by using e-beam evaporation method. We have analysed and discussed the phase structures under different conditions such as substrate temperatures and Cu contents, and we got highly c-axis oriented ZnO films. The microstructures of the films were observed by AFM. It was found that 400℃ is an ideal silicon substrates temperature, which conforms to the analysis of XRD. By analyzing the magnetism of ZnO films, we found that the films appropriately doped with Fe, Co ions have ferromagnetism at room temperature and their ferromagnetism can be improved by doping a few Cu ions.
出处
《磁性材料及器件》
CAS
CSCD
2006年第1期19-22,35,共5页
Journal of Magnetic Materials and Devices
基金
教育部科学技术研究重大项目(0307)
关键词
ZNO薄膜
掺杂
电子束蒸发
结构
磁性能
ZnO film
doping
e-beam evaporation
crystal structure
magnetic properties
