摘要
利用MBE设备制备GaAs/Al GaAs超晶格材料,在低温(T=77K)下测量样品的光电流谱,从电子波动的观点出发,通过考虑电子波在超晶格阱层/势垒层的反射和干涉,讨论了超晶格的电子态.提出了一种计算超晶格微带带宽的方法,并计算了GaAs/Al GaAs超晶格的微带带宽.理论计算结果和实验结果符合得相当好.
GaAs/AlGaAs superlattices are grown by molecular beam epitaxy（MBE）, and their photocurrent are measured at low temperature（T = 77K）. From the view of electron wave mechanics,taking into account the electron wave reflections at the interface between the well and the potential barrier layer, we discuss the electronic states above the barriers in a GaAs/ AlGaAs superlattice. This paper presents a new method on calculating the breadth of the microband, and the calculated microband breadth of GaAs/AlGaAs superlattice is in good agreement with the experimental results.
基金
国家自然科学基金资助项目(批准号:69976016)~~
关键词
超晶格
电子态
微带带宽
计算法
superlattice
electron states
microband breadth
calculation method
