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Photoconductive Properties of MEH-PPV/CuS-Nanoparticle Composites 被引量:4

Photoconductive Properties of MEH-PPV/CuS-Nanoparticle Composites
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摘要 Photoconductive properties of photodiodes based on composites of CuS nanoparticles and Poly[2-methoxy,5- (2'-ethylhexyloxy)-p-phenylenevlnylene] (MEH-PPV) are investigated. By comparing composite devices with different MEH-PPV:CuS weight ratios of l:l (D2-1), 1:1.25 (D2-2), 1:2.5 (132-3) and 1:5 (D2-4), it is found that the device D2 3 exhibited the best performance: the short-circuit current density of 17μA/cm^2 with the light intensity of 16.7mW/cm^2, the highest open-circuit voltage of 0,83 V, and the photosensitivity of 132 at reverse bias of - 1 V. The photosensitivity is improved by a factor of 5 compared with the undoped MEH-PPV device. Photoconductive properties of photodiodes based on composites of CuS nanoparticles and Poly[2-methoxy,5- (2'-ethylhexyloxy)-p-phenylenevlnylene] (MEH-PPV) are investigated. By comparing composite devices with different MEH-PPV:CuS weight ratios of l:l (D2-1), 1:1.25 (D2-2), 1:2.5 (132-3) and 1:5 (D2-4), it is found that the device D2 3 exhibited the best performance: the short-circuit current density of 17μA/cm^2 with the light intensity of 16.7mW/cm^2, the highest open-circuit voltage of 0,83 V, and the photosensitivity of 132 at reverse bias of - 1 V. The photosensitivity is improved by a factor of 5 compared with the undoped MEH-PPV device.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第3期693-696,共4页 中国物理快报(英文版)
基金 Supported by Trans-Century Training Program Foundation for the Talents of Natural Science by the State Education Commission, the Key Project of the Ministry of Education of China under Grant No 105041, the National Natural Science Foundation of China under Grant Nos 90401006, 10434030 and 90301004, and the National Key Basic Research and Development Programme of China under Grant No 2003CB314707.
关键词 PHOTOVOLTAIC DEVICES POLYMER COMPOSITES CHARGE SEPARATION CELLS PHOTOVOLTAIC DEVICES POLYMER COMPOSITES CHARGE SEPARATION CELLS
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参考文献17

  • 1Chu T L and Chu S S 1995 Solid State Electron. 38 533.
  • 2He Z B et al 2003 Thin Solid Films 424 157.
  • 3Cheng J X et al 2001 Chem. Phys. Lett. 333 375.
  • 4McDonald S A et al 2004 Appl. Phys. Lett. 85 2089.
  • 5Winiarz J G, Zhang L M, Lal M, Friend C S and Prasad P N 1999 Chem. Phys. 245 417.
  • 6Lu K Q et al 2004-Chin. Phys. Lett. 21 1086.
  • 7Gao L et al 2004 Solid State Commun. 130 309.
  • 8Tan C H et al 2005 Mater. Chem. Phys. 91 44.
  • 9Nelson J, Choulis S A, Bradley D D C and Durrant J R 2003 Third World Conference on Photovoltaie Energy Conversion (11-18 May 2003, Osaka, Japan) p 2686.
  • 10Yu G and Heeger A J 1995 J. Appl. Phys. 78 4510.

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  • 4Gerasimos Konstantatos,Ian Howard,Armin Fischerl,et al.Ultrasensitive Solution-cast Quantum Dot Photodetectors[J].Nature,2006,442(7099):180.
  • 5Liu H Y,Xu B,Wei Y Q,et al.High-power and Long-lifetime InAs/GaAs Quantum-dot Laser at 1080nm[J].Applied Physics Letters,2001,79(18):2868.
  • 6Liu H Y,Xu B,Wang Z G,et al.Room-temperature,Ground-state Lasing for red-emitting Vertically Aligned InAlAs Quantum dots grown on a GaAs(100) Substrate[J].Applied Physics Letters,2002,80(20):3769.
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