摘要
作为一种新型的Ⅱ-Ⅵ半导体材料, ZnO具有优良的光学和电学性能,在紫外光发射器件、自旋功能器件、气体探测器、表面声波器件等领域有着广阔的应用前景。首先介绍了ZnO材料和脉冲激光溅射法的一些相关内容,然后从材料制备角度着重阐述了目前利用脉冲激光沉积法(PLD)制备ZnO基薄膜的若干重要研究方向,例如p型掺杂、 p-n结的制备、 Mg掺杂、 Cd掺杂和磁性离子掺杂等。
ZnO, as a novel material of Ⅱ-Ⅳ semiconductor, has excellent optical and electrical properties. ZnO-based thin films have considerable potential applications in many felds, such as UV light emitter, spin functional devices, gas sensors, transparent electronic and surface acoustic wave devices. Firstly, the relevant knowledge of ZnO and pulsed laser deposition is introduced, then recent advances on ZnO-based films, such as p-ZnO, p-n junction, Zn1-xMgxO thin film, Zn1-xCdxO thin films and magnetic ions doped ZnO thin films are illustrated with the emphasis.
出处
《量子电子学报》
CAS
CSCD
北大核心
2006年第1期1-9,共9页
Chinese Journal of Quantum Electronics
基金
中国科学院安徽光机所资助项目
