摘要
分析了阳极键合工艺的原理及其工艺条件对CMOS电路的影响,并通过理论分析和实验研究了单片集成MEMS中的两种阳极键合方法:对于玻璃在硅片上方的键合方式,通过在电路部分上方玻璃上腐蚀一定深度的腔及用氮化硅层保护电路可以在很大程度上减轻阳极键合工艺的影响;而玻璃在硅片下方的键合方式,硅片上的电路几乎不受阳极键合工艺的影响,两种方法各有优缺点。
The principle of anodic bonding is described and effects on CMOS circutts causea oy me process is given. The feasibility and methods of packaging monolithically integrated MEMS by anodic bonding is studied and proved by analysis and experiment. Two different methods of anodic bonding between glass and silicon with circuit patterns are used in protecting CMOS circuits from the damage of anodic bonding process. One method is that the circuits deposited by a layer of Si3N4 on the silicon is covered again with a piece of Pyrex glass which is etched according to the circuit patterns. Another is to put the glass under the silicon with the circuits on the front side. The first method can alleviate the effects on the CMOS circuits to a large degree, and by the second one anodic bonding process effects little on the circuits. Each of them has a strong and weak point.
出处
《电子器件》
EI
CAS
2005年第4期743-746,共4页
Chinese Journal of Electron Devices
基金
江苏省自然基金(BK2003052)的资助项目
关键词
单片集成MEMS
阳极键合
monolithically integrated MEMS
anodic bonding
