摘要
虽然有几个作者已经研究了GaP:(Bi),AlxGa1-xP:(Bi)的发光光谱,但涉及光谱的谱形和谱线展宽的本质等问题还没引起注意和得到讨论。本文介绍这两个材料的光谱研究结果,并就上述问题展开讨论。
We report on the analysis of the spectral shape of GaP:(Bi), AlxGa1-xP: (Bi) and the nature of line broadening. It is shown that in GaP(Bi) the luminescence center is coupled with a continuous spectrum of phonons (called B-mode).In analysing the 140K bell-shape spectrum, we employ more powerful method of Fourier transform by the curve fitting, and the broad bell-shaped spectrum may be approximately described by a gaussian function. At low temperatures (65K≤T< 140K) the luminescence spectrum is composed of the sharp peaks and a broad bell-shaped curve,and the transition probability can be formulated as W△B = WA * WB, where WA(Iλis→Jλ'fs) = Wλλ/ПS Wisfs. Similarly, the luminescence spectrum of AlxGa1-xP:(Bi) is analysed. The coupling parameter Sloc, SB(T), and the line-width are presented, and the influence of different factors on the spectral shape is discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1989年第4期389-391,共3页
Research & Progress of SSE
