摘要
采用MOCVD以A l2O3为衬底对GaN生长进行了研究.用X射线双晶衍射、电化学CV技术对GaN的结晶性能和电学性能进行了表征.研究表明,GaN的生长模式对其电学性能和结晶性能影响很大.在高温GaN生长初期,适当延长GaN的三维生长时间,能明显改善GaN薄膜的结晶性能,降低薄膜的缺陷密度和本底载流子浓度,使GaN质量明显提高.
The growth of GaN was performed by a Thomas Swan MOCVD on （0001） oftented sapphires. Properties of GaN layers were investigated by double crystal X - ray diffraction, optical microscope and ECV measurements. The results indicated that the growth mode obviously influenced the electric parameters and crystal quality of GaN layers. The crystal quality could be improved and the background carrier concentrations could be reduced if the three dimension growth of GaN was prolonged properly at the beginning of high temperature GaN growth.
出处
《华南师范大学学报（自然科学版）》
CAS
2005年第4期58-62,共5页
Journal of South China Normal University(Natural Science Edition)
基金
国家科技攻关计划资助项目(00-068)
华南师范大学博士启动资金资助项目(660119)
