摘要
A flash-lamp-pumped Nd：YAG regenerative amplifier has been developed at 1.06 μm, seeded with 10- ps pulses from a diode-end-pumped and mode-locked Nd：YAG oscillator with homemade semiconductor saturable absorber mirror （SESAM）. The pulse energy was amplified to 2 mJ by the regenerative amplifier at 10-Hz repetition rate. In two-stages amplifier the regenerative amplified pulse energy was amplified to 100 m J, and 35-mJ double frequency at 532 nm was obtained by extra-cavity double frequency with a KTP crystal.
A flash-lamp-pumped Nd：YAG regenerative amplifier has been developed at 1.06 μm, seeded with 10- ps pulses from a diode-end-pumped and mode-locked Nd：YAG oscillator with homemade semiconductor saturable absorber mirror （SESAM）. The pulse energy was amplified to 2 mJ by the regenerative amplifier at 10-Hz repetition rate. In two-stages amplifier the regenerative amplified pulse energy was amplified to 100 m J, and 35-mJ double frequency at 532 nm was obtained by extra-cavity double frequency with a KTP crystal.
基金
This work was supported by Ministry of Science and Technology of China (No. JG-2000-05) the Natural Science Foundation of Beijing (No. 3021001)the foundation of Liaochens University.
