摘要
本文对源漏ｎ＋浅结注入的自对准ＧａＡｓＭＥＳＦＥＴ内部的电位、电场及载流子浓度的稳态分布进行了二维数值分析，分析表明，不同ｎ＋注入深度对器件的特性有一定的影响，当ｎ＋注入深度为有源层厚度的１／４时，畴的体积最小．适当选取ｎ＋区边缘与栅之间的距离可提高器件的击穿电压．
This paper presents a two-dimensional numerical analysis method and program for self-aligned GaAs MESFET.by using finite-differential method. For different n￣+depth, the distributions of potential, electric field and carrier concentration along the channel and the current-voltage characteristic curve are studied. The results show that the deeper the n￣+ implanted depth, the bigger will the domain be. Reasonable Lgs and Lgd will improve the device breakdown voltage.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第8期54-57,共4页
Acta Electronica Sinica
