摘要
本文提出以各子电池的载流子输运方程为基础、用串联等效的方法模拟多结电池的Ｊ－Ｖ特性．并用该方法模拟分析了Ｐ／Ｉ界面态．Ｐ／Ｉ缓冲层带隙梯度对Ｇｌａｓｓ／ＴＣＯ／ａ－Ｓｉ／ａ－Ｓｉ／Ａｌ双结电池光电特性的影响、各子电池本征层为常数带隙的Ｇｌａｓｓ／ＴＣＯ／ａ－Ｓｉ／ａ－Ｓｉ／ａ－ＳｉＧｅ／Ａｌ三结电池的光电特性及其所存在的优势．
Based on the carrier transportation equations of each subcell and equivalent series connection theory ,a method of modeling the J-V. characteristics of multijunction solar cells is presented. With the computed results ,the effects of P/I interface state and band-gap gradient of P/I buffer layer on the photoelectronic performance of Glass/TCO/a-Si/a-Si/Al tandem cells are analysed. The estimated performance and advantages of Glass/TCO/a-Si/a-Si/a-SiGe/Al triple cells are also presented.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第8期37-43,共7页
Acta Electronica Sinica
关键词
多结太阳电池
模拟分析
界面态
带隙梯度
Multijunction solar cells
Modeling analysis
Interface state
Band-gap gradient,Photoelectronic performance
