摘要
本文给出了一种新型热离子光电探测器的结构、特性和理论。这种多数载流子器件，在基本结构上异于普通的ｐ－ｉ－ｎ光电两极管，雪崩两极管及光电三极管，而又区别于其它多子器件：①存在着一个大的中央ｐ＋ｎ－结区域，它在功能上类似空穴存储库。③在ｐｎ两极管的周围处有一个特殊形状的ｎ＋＋ｐ＋ｎ－框架结构。普通光电两极管在６３３ｎｍ的绝对灵敏度为０．３５Ａ／Ｗ，新器件为１．３６Ａ／Ｗ。
The construction,characteristics and theory of a new type of thermionic photodetector are described.It is a maiority-carrier device,which differs from conventional p-i-n photodiodes,avalanche photodiodes and photo transistors in basic structure.The main differences between this detetor and other majority-carrier devices are:①There is a large central p+ n- juncture area,whose function is similar to a hole storehouse.②In perphery of pn diode,there is a special ring frame n++ p+ n- sandwich structure.The absolute responsivrty of the new device is 1.36A/W ,while that of the ordinary diode is 0.35A/W.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第2期109-111,共3页
Acta Electronica Sinica
基金
国家自然科学基金
关键词
热离子
光电二极管
多数载流子
传输
硅
Thermionic photodiode,Majority carrier transmission,Silicon semiconductor device
