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大规模存储器电离辐射试验方法 被引量：1

A Test Method for Ionizing Radiation Effects in Very Large Scale Memory Devices
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摘要 提出了大规模存储器总剂量效应实验方法,给出了随机存储器(SRAM)、电擦除电编程只读存储器(EEPROM)和闪速存储器(Flash ROM)的60Coγ总剂量效应,以及辐照后在100℃高温条件下退火的实验结果。对实验现象进行了分析。 A method for testing total dose effects （TDE） in very large-scale memory devices is presented. Experimental results of ^60 Coγ TDE＇s and post-irradiation annealing at 100 ℃ for SRAM＇s, EEPROM＇ s and flash ROM＇ s are described. And mechanism of TDE in very large-scale memory devices is analyzed.
作者 匡治兵 郭旗 吾勤之 任迪远 陆妩
机构地区 中国科学院新疆理化技术研究所
出处 《微电子学》 CAS CSCD 北大核心 2005年第5期489-492,共4页 Microelectronics
关键词 测试方法 电离辐射 总剂量效应 存储器 Test method Ionizing radiation Total dose effect Memory
分类号 TN386.1 [电子电信—物理电子学] TN307 [电子电信—物理电子学]
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共引文献23

同被引文献18

  • 1何宝平,周荷琴,郭红霞,周辉,罗尹虹,姚志斌,张凤祁.大规模集成电路浮栅ROM器件总剂量辐射效应[J].Journal of Semiconductors,2006,27(1):121-125. 被引量：4
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引证文献1

微电子学
2005年 第5期

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