摘要
研究了超短光脉冲在GaAs表面激发相干亚毫米波振幅随入射角变化的规律，前后向辐射比值随入射角度变化的规律，实验测量了在GaAs表面镀上极薄金属薄膜后所产生的相干亚毫米波振幅对薄膜厚度的依赖关系；利用光生载流子偶极辐射的理论模型成功地解释了实验得到的角度依赖关系和相干亚毫米波的偏振特性。
The coherent submillimeter wave generated from the GaAs surface exited by ultrashort optical pulses is incident- angle dependent and the ratio of forward and backward radiaion is related with the optical incident angle. The relationship between the thichness of the metal film coated on GaAs surface and the amplitute of submillimeter wave are measured. The theoretical model of the photon carrier dipole gives a well explanation on the angle dependent relatonship and the polarization of the coherent submillimeter wave.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1996年第4期403-407,共5页
Acta Optica Sinica
基金
中国国家自然科学基金
