摘要
报道了ｎ型Ｈｇ０．８Ｃｄ０．２Ｔｅ光电导体的变温材料参数与性能参数的对照关系，并讨论了材料的锭条参数与小芯片霍耳参数的差异，得到一组光电导的实验优化数据．实测小芯片载流子浓度ｎ≈１．８×１０１５ｃｍ－３，这与高性能器件实测值的倒推数值一致。
The relationship between material characteristics and the device performances of n type Hg 0.8 Cd 0.2 Te at different temperature was reported,and the difference of Hall parameter between ingot and chip was discussed.The optimized parameter was obtained in the experiment.The measured carrier concentration n ≈1.8×10 15 cm -3 is consistent with the derived value of the device of high performance.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第3期189-194,共6页
Journal of Infrared and Millimeter Waves
关键词
HGCDTE
光电导
背景辐射
光电子学
mercury cadmium telluride,photoconductivity,background radiation.
