摘要
We study the effects of a laser beam from the laser diode operating at 980nm on the violet-excited ZnS：Cu and SrAl2O4：Eu phosphor powders. Two contrary phenomena, i.e., infrared-induced permanent quenching and short-lived enhancement of phosphorescence, are observed. The defect levels play a significant role in both the processes. It is demonstrated that the phosphorescence induced by the violet beam can be controlled by another infrared beam. The turn-off and turn-on behaviour means that doping luminescent centres into host materials is a considerable way to design a new all-optical switch and may control the output of laser beams in the fibre lasers and optical communications.
We study the effects of a laser beam from the laser diode operating at 980nm on the violet-excited ZnS：Cu and SrAl2O4：Eu phosphor powders. Two contrary phenomena, i.e., infrared-induced permanent quenching and short-lived enhancement of phosphorescence, are observed. The defect levels play a significant role in both the processes. It is demonstrated that the phosphorescence induced by the violet beam can be controlled by another infrared beam. The turn-off and turn-on behaviour means that doping luminescent centres into host materials is a considerable way to design a new all-optical switch and may control the output of laser beams in the fibre lasers and optical communications.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60276035 and 60478041, and the Space Technology Foundation of China under Grant No 2002-HT-ZJDX-08.
