摘要
通过改进碲溶剂长晶炉的径向炉温分布,改善了晶体生长的液-固界面,用碲溶剂长晶方法生长出了高均匀性碲镉汞体晶材料,用英国爱丁堡Mullard公司的碲镉汞晶片评价装置在光斑为1 mm2的测试条件下测出晶片材料组分均匀性Ax为+0.003 mol.CdTe,达到了制作红外焦平面探测器列阵对材料的要求。
The modifications of radial temperature profile for the Te-Solvent crystal growing furnace, improved growing liquid-solid interface, then obtained the high compositional uniformity single crystal of Hg1-xCdxTe. The radial compositional uniformity achieved ± 0.003 mol.CdTe, and can meet the requirements of Infrared Focus Panel Array Detectors. This result is tested by Slice Evaluation Spectrometer.
出处
《红外技术》
CSCD
北大核心
2005年第5期384-387,共4页
Infrared Technology
关键词
碲镉汞
红外材料
组分均匀性
HgCdTe
Infrared Materials
Compositional Uniformity
