摘要
Monte Carlo methods are used to analyze yields and performance of GaAs flash ADCs. Due to the nonuniformity of threshold voltage,the DNL and INL of flash ADC will decrease approximately linearly. And the higher the resolution of ADC is, the faster these key nonlinear parameters decrease. When the nonuniformity increases to some degree,the yields of GaAs flash ADCs will decrease exponentially,and the missing code will increase more quickly for the higher resolution ADCs. So,GaAs HBT and HEMT with technology of etching stop will be widely used in high speed and high resolution ADCs.
利用蒙特卡罗分析法对GaAsflashADC的成品率及其关键参数的灵敏度进行了定性及定量的分析.当器件阈值电压的标准偏差增大时,flashADC的DNL,INL性能会以近似线性的关系降低且更高分辨率ADC线性性能的恶化速度更快;ADC的成品率离散达到一定程度后,以指数关系下降,且高分辨率ADC的丢码率会以更快的速度增长.分析结果表明,HBT以及带腐蚀自停止的HEMT技术是超高速高分辨率ADC的发展方向.
