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不同能量He离子注入单晶Si引起的损伤研究 被引量：1

Damage Creation in Single Crystal Silicon Induced by He Ion Implantation at Different Energies
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摘要 40、160和1550keV能量的He离子在室温下注入单晶Si样品到相同的剂量5×1016ions/cm2,采用透射电子显微镜(TEM)研究了800℃退火1h在Si中引起的损伤形貌。结果表明,三种能量的He离子注入Si并经高温退火均能产生空腔,但空腔的形貌、尺寸以及分布深度都依赖于离子的能量。结合TRIM程序计算结果对空腔和其它缺陷产生对He离子能量的依赖性进行了讨论。 Single crystal silicon samples were implanted at room temperature with He ions of different energies （40, 160 and 1550keV） to the same fluence of 5 × 10^16 ions/cm^2. Cross-sectional transmission electron microscopy was used to study on the formation of cavities after the subsequent annealing at 800℃ for 1h. The results show that cavity band can be formed in He ion implanted samples with different energies. However, the width of the band, the size of cavities, the morphology and location of the band depend strongly on the implantation energy of He ions. The results are discussed in combination with the TRIM simulations.
作者 刘昌龙 尹立军 吕依颖 阮永丰 E.Ntsoenzok D.Alquier
机构地区 天津大学理学院物理系 CERI/CNRS LMP/STMicroelectronics
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第4期714-719,共6页 Journal of Synthetic Crystals
基金 天津大学留学回国人员启动资金(W50301) 教育部留学人员回国基金(No.413147)资助项目
关键词 单晶Si He离子注入 高温退火 He空腔 透射电子显微镜 single crystal silicon He ion implantation high temperature annealing He-cavities transmission electron microscopy
分类号 O77 [理学—晶体学]
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参考文献15

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同被引文献16

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引证文献1

人工晶体学报
2005年 第4期

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