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1.8GHzCMOS有源负载低噪声放大器 被引量:4

A CMOS Low Noise Amplifier at 1.8 GHz with Active Inductor Load
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摘要 提出了一种新的变压器型有源电感负载低噪声放大器设计方案。单片无源大电感的品质因数通常很低,因此,需验证变压器型有源电感替代无源电感负载的有效性,与现有的一些单片无源电感负载低噪声放大器进行了比较,结果表明变压器型有源电感负载低噪声放大器可以得到更低的噪声系数。 A 1.8GHz CMOS low noise amplifier (LNA) with transformer-type active inductor load is presented, For large inductance value, the quality-factor (Q) of an on-chip passive inductor is commonly low. Hence, the purpose of this work is to verify the validity of using transformer-type active inductor load as substitutes for passive one. The performance of the LNA is simulated and compared with certain existing LNA with passive on-chip inductor load which shows the can achieve lower noise figure.
出处 《电子器件》 CAS 2005年第3期494-496,共3页 Chinese Journal of Electron Devices
基金 国家自然科学基金资助的项目 基金号:60371017
关键词 互补金属氧化物半导体 低噪声放大器 有源电感 噪声系数 complementary metal oxide semiconductor low noise amplifier active inductor noise figure
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同被引文献20

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