摘要
本文在17-100K的温度范围内对GaP:N,Zn样品进行了变温光致发光的研究.在低温下,观察到NN_3-Zn,Zn-LO的发光峰,其中NN_3-Zn是一个双峰结构.研究NN_1-Zn复合发光强度随温度的变化关系,表明了NN_1中心裸电子态的存在.本工作证实了NN_1和NN_3中心的HTL模型.
The photoluminescence of Zn^+ implanted GaP:N has been studied at different temperatu-res ranging from 17 to 100K.At low temperatures NN_2-Zn and Zn-LO emission lines wereobserved. NN_2-Zn was a doublet.Analysing the temperature dependence of NN_1-Zn emission,it showed the existence of bare electron bound state for NN_1 center.This work further con-firms the HTL model for NN_1 and NN_2 centers.
基金
国家自然科学基金
