摘要
报道了利用ＬＰ－ＭＯＶＰＥ技术生长高质量的ＩｎＧａＡｓ／ＩｎＧａＡｓＰ分别限制应变量子阱激光器结构材料、激光器制作和结果．宽而激光器实现了室温脉冲受激发射．激射波长为１．４９μｍ，在腔长为２０００μｍ时，最低阈值电流密度为０．３０ｋＡｃｍ－２．最大脉冲光输出峰值功率达５００ｍＷ以上．同时，从理论和实验上研究了阙值电流及阙值电流密度随激光器腔长的变化关系，并与ＬＰ－ＭＯＶＰＥ生长制作的宽面双异质结构激光器进行了比较．
The successful fabrication of the room temperature broad-area InGaAs/InGaAsP separated confinement strained-layer multiple-quantum-well (MQW) pulsed lasers at 1. 49μm emission wavelength using LP-MOVPE is reported. The lowest threshold current density (Jth) at room temperature is 0. 3 kAcm-2 for the cavity length of 2000 μm. The power saturation doesn’t occur yet while the pulsed output power is higher than 500 mW.Furthermore, the threshold current densities of these broad area lasers at varying cavity lengths have been investigated by comparing with those of the room temperature broad-area pulsed DH lasers grown by LP-MOVPE.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1995年第8期575-578,共4页
Chinese Journal of Lasers
