摘要
用电子束蒸发Ｔａ＿２Ｏ＿５或Ｙ＿２Ｏ＿３膜作绝缘层制备ＺｎＳ：ＭｎＡＣＴＦＥＬ器件。比较两种类型绝缘层器件的光电特性，探讨制备低阈值电压和高亮度ＡＣＴＦＥＬ器件的途径，研究表明用电子束蒸发制备Ｔａ＿２Ｏ＿５绝缘层的器件可获得低阈值发光。
The ZnS:Mn ACTFEL devices with Ta_2O_5 or Y_2O_3 insulating layers arefabricated.The insulating layers are prepared by electron-beam(EB)Evaporation. The electro-optical properties of the devices with Ta_2O_5 or Y_2O_3 of insulation layers are investigated and com-pared. The efforts were made in order to fabricate ACTFEL devices with low threshold voltageand high brightness. It is shown that the low threshold voltage of the devices might be achievedevaporating Ta_2O_5 layers by EB method.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1995年第4期553-556,共4页
Journal of Xiamen University：Natural Science
基金
福建省自然科学基金
