摘要
本文从ＩＧＢＴ发生闩锁的机理出发，推导出ＩＧＢＴ结构中两个寄生双极晶体管的共基极电流放大系数及ＮＰＮ管基区横向电阻值随电流密度变化的解析模型，并据此对条形和矩形元胞结构的ＩＧＢＴ器件编制了闩锁电流分析计算程序，取得了与国外报道相一致的结果。
A one dimensional analytical model of the IGBT is proposed from the mechanism of the IGBT latchup. As a function of the current density, common base current gains of the two parasitic bipolar transistors, as well as the lateral resistor in the NPN transistor's base, are deduced. Based on this model,computer programs have been developed to accurately determine the latch up current density of IGBT's with stripe or rectangular cells.
出处
《微电子学与计算机》
EI
CSCD
北大核心
1995年第6期52-56,共5页
Microelectronics & Computer
